Toshiba’s Universal Flash Memory has 64-Layer, 3D structure

November 30, 2017 //By Graham Prophet
Toshiba’s Universal Flash Memory has 64-Layer, 3D structure
Toshiba Memory Europe is sampling Universal Flash Storage (UFS) devices using its 64-layer, BiCS FLASH 3D flash memory, for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The devices will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB (nominal). All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13mm package. The controller performs error correction, wear levelling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.


All four devices are compliant with JEDEC UFS Ver2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8 Gbps per lane (x2 lanes = 11.6 Gbps) while also suppressing any increase in power consumption. Sequential read and write performance of the 64 GB device are 900 MB/sec and 180 MB/sec, while the random read and write performance are around 200% and 185% better, respectively, than those of previous generation devices (Toshiba’s own previous generation 64GB device, THGAF4G9N4LBAIR). With a serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.






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