General-purpose, 2.1 mΩ FET switch for DC/DCs and load switching

May 26, 2014 // By Graham Prophet
A power MOSFET from Advanced Power Electronics offers fast switching performance and ultra low on-resistance.

The Taiwanese manufacturer has a cost-effective N-channel enhancement-mode power MOSFET offering a fast switching performance and ultra low on-resistance for low voltage applications such as DC/DC converters and load switching.

The AP100T03GP-HF-3 MOSFET comes in a TO-220 through-hole package which is popular for commercial and industrial surface-mount applications requiring a small PCB footprint or an attached heatsink.

The new power MOSFET has simple drive requirements and offers fast switching performance, ultra low on-resistance of only 2.1 mΩ, a drain-source breakdown voltage of 30V, and a continuous drain current of 215A.

Advanced Power Electronics (APEC);