Double sided cooling for 60V power MOSFETs

February 14, 2017 // By Graham Prophet
Toshiba Electronics Europe (TEE) has extended its range of high-efficiency U-MOS IX-H MOSFETs with an N-channel device in a ‘DSOP Advance’ SMD package that offers double sided cooling. Aimed at motor control and power supplies the high-speed MOSFETs have 1.29 mΩ maximum RDS(ON).

The 60V TPW1R306PL has a typical on resistance (@ VGS = 10V) of just 0.95 mΩ in a small form factor of 5 x 6 mm. Maximum drain current and power dissipation are 260A and 170W respectively. The enhanced thermal dissipation provided by the double-sided cooling will help to reduce device count and save space in high-component-density applications. The thermal resistance rating (Rth (ch-c) of 0.88 k/W) to the top side of the package is significantly lower than that of alternative packages. Toshiba's U-MOS IX-H process enables an optimum trade-off between RDS(ON) and output capacitance/output charge: typical QOSS is 77.5 nC.


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