650-V N-Channel MOSFETs handle currents from 6 to 105A

May 23, 2013 // By Graham Prophet
Vishay Intertechnology has expanded its E-Series Devices that use super junction technology for low figures-of-merit and high power density, with new devices offering on-resistance down to 30 mΩ

These 22 new devices in eight different packages offer an extended on-resistance range from 30 mΩ to 600 mΩ at 10V and broaden the series' maximum current ratings from 6A to 105A. Based on the next generation of Vishay Siliconix Super Junction Technology, the 650-V E Series MOSFETs allow extended headroom for applications that require additional input-voltage safety margin in renewable, industrial, lighting, telecommunications, consumer, and computing markets.

The devices introduced today bring the total number of 650 V E Series MOSFETS to 26. All E Series devices offer ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptable power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors, and solar inverters.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant.

Vishay, www.vishay.com