1200V, 180A all-silicon-carbide module cuts losses with trench FETs

May 26, 2016 // By Graham Prophet
Rohm Semiconductor recently released its BSM180D12P3C007 SiC half-bridge switching module rated at 1200V/180A, that integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint as prior modules.

Rohm says it has been able to successfully mass-produce the first trench-type SiC MOSFETs using a proprietary structure, with long-term reliability. The module implements MOSFETs with an advanced UMOS structure, that do not have a JFET region and that maximize SiC benefits. It provides the lowest drain-source resistance together with high speed switching performance, and - thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs - it has almost no recovery loss Err.


As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower switching loss than planar SiC Modules employing a 2nd-generation SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components.


Rohm Semiconductor; www.rohm.com/eu